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APTGV25H120BG
Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module
Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80C Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80C
Q3 CR1 CR3 G3
K
K
VBUS1
VBUS2
Q1 CR5 G1
Application * Solar converter
C5 C5 Q5 G5 EK5 CR5B G2 E2 Q2
OUT1A OUT1B CR2
OUT2A OUT2B Q4 CR4 G4 E4
Features * Q2, Q4, Q5(FAST Non Punch Through (NPT) IGBT) - Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current * Q1, Q3 (Trench & Field Stop IGBT) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current * Kelvin emitter for easy drive * Very low stray inductance * High level of integration Benefits
E5 E5
0/VBUS
Full bridge top switches : Trench + Field Stop IGBT Full bridge bottom switches : FAST NPT IGBT Q5 boost chopper : FAST NPT IGBT
K K G1 OUT 1B OUT 1A C5 C5 VBUS 1 VBUS 2 OUT 2B OUT 2A G3
G5 EK5
G2 E5 E5 E2 0/VBUS
G4 E4
Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
* * * *
All multiple inputs and outputs must be shorted together OUT1A/OUT1B ; VBUS1/VBUS2 ; K/K ; ...
September, 2007 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGV25H120BG - Rev 0
APTGV25H120BG
All ratings @ Tj = 25C unless otherwise specified 1. Full bridge top switches 1.1 Top Trench + Field Stop IGBT characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 40 25 50 20 156 50A @ 1150V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 25A RG = 27 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 25A RG = 27 VGE = 15V Tj = 25C VBus = 600V Tj = 125C IC = 25A Tj = 25C RG = 27 Tj = 125C Min Typ 1800 82 90 30 420 70 90 50 520 90 1.9 2.5 1.9 2.9 0.8 Max Unit pF
ns
ns
mJ C/W
September, 2007 APTGV25H120BG - Rev 0
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APTGV25H120BG
1.2 Top fast diode characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 25A IF = 50A IF = 25A IF = 25A VR = 667V di/dt =200A/s
Min 1200
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
25 2.6 3.2 1.8 320 360 480 1800
3.1 V
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 1.4
C/W
2. Full bridge bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 40 25 100 20 208 50A@1150V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6 400 Unit A V
September, 2007 3 - 14 APTGV25H120BG - Rev 0
2.5 4
3.2 4.0
V nA
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APTGV25H120BG
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =25A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 25A RG = 22 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 25A RG = 22 VGE = 15V Tj = 125C VBus = 400V IC = 25A Tj = 125C RG = 22 Min Typ 1650 250 110 160 10 70 60 50 305 30 60 50 346 40 3.5 mJ 1.5 0.6
C/W
Max
Unit pF
nC
ns
ns
2.2 Bottom diode characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 25A IF = 50A IF = 25A IF = 25A VR = 667V di/dt =200A/s
Min 1200
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
25 2.6 3.2 1.8 320 360 480 1800
3.1 V
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 1.4
C/W September, 2007
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APTGV25H120BG - Rev 0
APTGV25H120BG
3. Boost chopper switches 3.1 Fast NPT IGBT characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Test Conditions VGE = 0V Tj = 25C VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Max ratings 1200 70 50 150 20 312 100A @ 1200V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Min Typ Max 250 500 3.7 6.5 100 Unit A V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A RG = 5 VGE = 15V Tj = 125C VBus = 600V IC = 50A Tj = 125C RG = 5 Min Typ 3450 330 220 330 35 200 35 65 320 30 35 65 360 40 mJ 3.05 0.4
C/W September, 2007 APTGV25H120BG - Rev 0
Max
Unit pF
nC
ns
ns
6.9
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APTGV25H120BG
3.2 Chopper diode characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/s
Min 1200
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
30 2.6 3.2 1.8 300 380 360 1700
3.1 V
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 1.2
C/W
4. Package characteristics
Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Torque Mounting torque To heatsink M5 Wt Package Weight * Tj=175C for Trench & Field Stop IGBT Min 2500 -40 -40 -40 2.5 Typ Max 150* 125 100 4.7 160 Unit V C N.m g
5. SP4 Package outline (dimensions in mm)
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGV25H120BG - Rev 0
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APTGV25H120BG
6. Full bridge top switches curves 6.1 Top Trench + Field Stop IGBT typical performance curves
Output Characteristics (VGE=15V) Output Characteristics 50
TJ = 125C VGE=17V VGE=13V
50
TJ=25C
40
TJ=125C
40 IC (A) 30 20 10 0
IC (A)
30 20 10 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5
VGE=15V
VGE=9V
0
1
2 VCE (V)
3
4
50 40 30 20 10 0 5 6
Transfert Characteristics 6 5
TJ=25C
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 27 TJ = 125C Eon
4 E (mJ)
TJ=125C
Eoff Eon
IC (A)
3 2
TJ=25C
1 0
7
8
9
10
11
12
0
10
20 IC (A)
30
40
50
VGE (V) Switching Energy Losses vs Gate Resistance 8 7 6 E (mJ) 5 4 3 2 1 0 0 40 80 120 160 Gate Resistance (ohms) 200
Eon VCE = 600V VGE =15V IC = 25A TJ = 125C
Reverse Bias Safe Operating Area 60
Eon
50 40 IC (A)
Eoff
30 20 10 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=125C RG=27
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.9
0.3 0.1 0.05 0.0001 0.001
Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
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APTGV25H120BG - Rev 0
September, 2007
0.5
APTGV25H120BG
6.2 Top Fast diode typical performance curves
Forw ard Current vs Forw ard Voltage 60 IF, Forward Current (A) 50
T J=1 25C
40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V)
T J=25C
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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APTGV25H120BG - Rev 0
September, 2007
APTGV25H120BG
7. Full bridge bottom switches curves 7.1 Bottom fast NPT IGBT typical performance curves
80 Ic, Collector Current (A) 70 60 50 40 30 20 10 0 0 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle TJ=125C
Output characteristics (VGE=15V) Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle TJ=25C
20 16 12 8 4 0
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle
TJ=25C
TJ=125C
1
8
0
0.5
1
1.5
2
2.5
3
3.5
VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 25A TJ = 25C VCE=240V VCE=600V
120
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0
100 80 60 40
VCE=960V
TJ=125C
20 0 0
TJ=25C
2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 125C 250s Pulse Test < 0.5% Duty cycle
15
30
60
90
120
150
180
Gate Charge (nC) On state Voltage vs Junction Temperature
Ic=50A Ic=25A
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
6 5 4 3
Ic=50A
Ic=25A
Ic=12.5A
2 1 0 25 50 75 100 TJ, Junction Temperature (C) 125
250s Pulse Test < 0.5% Duty cycle VGE = 15V
Ic=12.5A
10
11
12
13
14
15
16
VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.10 Ic, DC Collector Current (A)
50 40 30 20 10 0
DC Collector Current vs Case Temperature
1.05
1.00
0.95
0.90 25 50 75 100 125 TJ, Junction Temperature (C)
25
50 75 100 125 TC, Case Temperature (C)
150
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APTGV25H120BG - Rev 0
September, 2007
APTGV25H120BG
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 22
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
75 70 65 60 55 50 5 15 25 35 45 55 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 160
VCE = 600V RG = 22
400
VGE=15V, TJ=125C
350
VGE = 15V
300
VGE=15V, TJ=25C
250
VCE = 600V RG = 22
200 5 15 25 35 45 55
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 45
TJ = 125C
tr, Rise Time (ns)
tf, Fall Time (ns)
120
40 35 30 25
TJ = 25C
80
VGE=15V
40
VCE = 600V, VGE = 15V, RG = 22
0 5 15 25 35 45 55 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current
VCE = 600V RG = 22
20 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55
Turn-Off Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 4
VCE = 600V VGE = 15V RG = 22 TJ = 125C
Eon, Turn-On Energy Loss (mJ)
10 8 6 4 2 0 5
TJ=125C, VGE=15V
3
TJ=25C, VGE=15V
2
TJ = 25C
1
0
15 25 35 45 ICE, Collector to Emitter Current (A)
55
5
15 25 35 45 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area
55
Switching Energy Losses (mJ)
5 4 3 2 1 0
Switching Energy Losses vs Gate Resistance
VCE = 600V VGE = 15V TJ= 125C
60 IC, Collector Current (A)
Eon, 25A
50 40
Eoff, 25A
20 10 0
Gate Resistance (Ohms)
VCE, Collector to Emitter Voltage (V)
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APTGV25H120BG - Rev 0
0
10
20
30
40
50
60
0
400
800
1200
September, 2007
30
APTGV25H120BG
Fmax, Operating Frequency (kHz) Capacitance vs Collector to Emitter Voltage 10000
Cies
Operating Frequency vs Collector Current 120 100 80
ZVS VCE = 600V D = 50% RG = 22 TJ = 125C TC= 75C
C, Capacitance (pF)
1000
Coes
60 40 20 0 0 10 20 30 IC, Collector Current (A) 40
Hard switching ZCS
100
Cres
10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1
0.5 0.3 0.1 0.05 0.9 0.7
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
7.2 Bottom diode typical performance curves
Forw ard Current vs Forw ard Voltage 60 IF, Forward Current (A) 50
T J=1 25C
40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V)
T J=25C
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.9 0.7
0.3 0.1 0.05 0.0001 0.001 Single Pulse
Rectangular Pulse Duration (Seconds)
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APTGV25H120BG - Rev 0
0.01
0.1
1
10
September, 2007
0.5
APTGV25H120BG
8. Boost chopper switches curves 8.1 Fast NPT IGBT typical performance curves
200 Ic, Collector Current (A) 160 120 80 40 0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) On state Voltage vs Junction Temperature
Ic=100A Ic=50A VCE=960V IC = 50A TJ = 25C VCE=240V VCE=600V 250s Pulse Test < 0.5% Duty cycle TJ=25C TJ=125C
Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
50
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
40 30 20
TJ=125C
10 0
8
0
1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge
4
300
Ic, Collector Current (A)
250 200 150 100 50 0 0
TJ=125C TJ=25C
4 8 12 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
16
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
6 5 4 3
Ic=100A
Ic=50A
Ic=25A
2 1 0 25 50 75 100 TJ, Junction Temperature (C) 125
250s Pulse Test < 0.5% Duty cycle VGE = 15V
Ic=25A
10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp.
16
Collector to Emitter Breakdown Voltage (Normalized)
1.20 Ic, DC Collector Current (A) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 25 50 75 100 125 TJ, Junction Temperature (C)
70 60 50 40 30 20 10 0
DC Collector Current vs Case Temperature
25
50 75 100 125 TC, Case Temperature (C)
150
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APTGV25H120BG - Rev 0
September, 2007
APTGV25H120BG
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 5 VGE = 15V
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
45
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, TJ=25C VCE = 600V RG = 5
30
250
25 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 180
VCE = 600V RG = 5
200 0 25 50 75 100 125
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50
tr, Rise Time (ns)
tf, Fall Time (ns)
140
40
TJ = 125C
100
VGE=15V
30
TJ = 25C VCE = 600V, VGE = 15V, RG = 5
60
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
Eon, Turn-On Energy Loss (mJ)
24 20 16 12 8 4 0 0
VCE = 600V RG = 5
TJ=125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
28
Turn-On Energy Loss vs Collector Current 8
Turn-Off Energy Loss vs Collector Current
VCE = 600V VGE = 15V RG = 5 TJ = 125C
6
4
TJ = 25C
TJ=25C, VGE=15V
2
0 0 25 50 75 100 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 120 125
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 18 14 12 10 8 6 4 2 0 0 10 20 30 40 Gate Resistance (Ohms) 50
Eoff, 25A Eon, 25A Eon, 50A Eoff, 50A
IC, Collector Current (A)
16
VCE = 600V VGE = 15V TJ= 125C
100 80
40 20 0 0 400 800 1200 VCE, Collector to Emitter Voltage (V)
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APTGV25H120BG - Rev 0
September, 2007
60
APTGV25H120BG
Fmax, Operating Frequency (kHz) Capacitance vs Collector to Emitter Voltage 10000
Cies
Operating Frequency vs Collector Current 120 100 80 60 40 20 0 10 20 30 40 50 IC, Collector Current (A) 60
Hard switching ZCS ZVS VCE = 600V D = 50% RG = 5 TJ = 125C TC= 75C
C, Capacitance (pF)
1000
Coes
100 0
Cres
10 20 30 40 VCE, Collector to Emitter Voltage (V)
50
0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.7 0.5 0.9
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds)
8.2 Chopper diode typical performance curves
Forw ard Current vs Forw ard Voltage 80 IF, Forward Current (A)
60
T J=1 25C
40
T J=25C
20
0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGV25H120BG - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
September, 2007

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